Location
Engineering 1, Rm 124
Description
A high-precision rotating-compensator ellipsometer tailored for sensitive thin-film and optical property measurements in cleanroom environments. It features focused-beam optics for tight spot size and is ideal for mapping and characterizing semiconductor wafers and other substrates.
Configuration/Specifications
Spectral range: Deep‑UV to NIR, 190–1700 nm
Detector: High-speed CCD spectrometer
Angle of incidence: 45-75°
Ψ accuracy: ±0.075°, Δ accuracy: ±0.05°
Repeatability δΨ, δΔ: ≈0.015°
Light source: FLS‑350 75 W xenon (Xe) arc
Software: CompleteEASE for both in-situ and ex-situ applications
Substrate size
Up to 4″ substrates
Standard Operating Procedure
Make
J.A. Woollam
Model
M 2000F
Rate
CECS Facility Use