Location
Engineering 1, Rm 124
Description
The Orion III PECVD system produces production-quality films on a compact platform. The unique reactor design produces low stress films with excellent step coverage at extremely low power levels. It features a load lock for improved sample handling and reduced chamber contamination, making it ideal for research in photonics, MEMS, and microelectronics. The system utilizes silane-based chemistries and supports a variety of process gases.
Configuration/Specifications
Deposition Method: Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Plasma Source: 13.56 MHz RF-powered parallel plate
Maximum RF Power: 600 W
Process Gases Available: SiH₄, NH3, CF4, N₂O, N2, Ar, O₂
Films Deposited: SiO₂, SiNx,
Substrate size
8″ substrates
Make
Trion
Model
Orion III
Rate
CECS Tier-4