Location
Engineering 1, Rm 163
Description
This is a semi-automatic reactive ion etching (RIE) system designed for anisotropic and isotropic etching of dielectric, passivation, and semiconductor materials. It supports a broad range of materials, including silicon dioxide, silicon nitride, silicon oxy-nitride, silicon, polycrystalline silicon, polyimide, photoresist, and various polymer films. The system accommodates substrates up to 6 inches in diameter. The substrate is water-cooled, and RF power operates at 13.56 MHz with a maximum output of 200 W. Available process gases include CF₄, O₂, Ar, and SF₆, making the system versatile for a variety of etching applications.
Configuration/Specifications
200W RF
CF4, O2, Ar, and SF6
Substrate size
Up to 6″ substrates
Standard Operating Procedure
Make
Samco
Model
RIE-1C
Rate
CECS Tier-2