Location
Engineering 1, Rm 124
Description
This is a thin-film stress measurement instrument. It calculates film stress by measuring the change in radius of curvature of a substrate caused by the deposition of a thin film on the substrate. This requires measurement of the original substrate radius of curvature (first scan) followed by a second (single) scan to measure curvature with the film of interest deposited on the front of the substrate.
Configuration/Specifications
Measurement range: 1 MPa to 4 GPa
Repeatability (on 525 um thick silicon substrate):
1 MPa (1σ), +/-3 MPa range for 1 µm film
10 MPa (1σ), +/-30 MPa range for 1000 Å film
100 MPa (1σ), +/-300 MPa range for 100 Å film
Minimum radius: 2.0 m for 80 mm scan (100 mm wafer with 10 mm edge exclusion)
Substrate size
Up to 4″ substrates
Operations Manual Part 1
Operations Manual Part 2
Make
Flexus
Model
F2310i
Rate
CECS Tier-2